MJE2100 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

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20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
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MJE2090ri,n,MJE2093
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MJE2100*,uMJE2103
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PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
Designed for use in driver and output stages in complementary
audio amplifier applications.
• High DC Current Gain -
hpE = 750 (Mini @ IQ * 3.0 and 4 0 Adc
• True Three Lead Monolithic Construction - Emitter-Base Resistors
to Prevent Leakage Multiplication are Built in.
• Available in Two Packages — Case 90 or Case 199
5.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60-80 VOLTS
70 WATTS
MJE1090
MJE1091
MJE1092
MJE1093
MJE1100
MJE1101
MJE1102
MJE11O3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Bate Voltage
Emitter-Bate Voltage
Collector Current
Beie Current
Total Device Dunpation 9 TC • 25°C
Derate above 2S°C
Operating end Storage Junction
Temperatmg Range
THERMAL CHARACTERISTICS
CharMUriltic
Thermal Rniitince. Junction to C»M
Symbol
VCEO
VCB
VEB
'c
IB
>0
TJ. T,,,
MJE10M MJE1092
MJE1091 MJE10B3
MJE1100 MJE11O2
MJE1101 MJE11O3
MJE2OBO MJE20S2
MJE2091 MJE2OB3
MJE2100 MJE2102
MJE2101 MJE2103
60
BO
60 | 80
50
50
0,1
70
056
-55 t o * 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watt!
W/°C
°C
Symbol
Mai
»JC
1.8
Unit
°c/w
FIGURE 1 - POWER DERATING
X
\_-
N
N_>X
N
N
20
«l>
60
80
100 120 140 IN
TC. CA5f TEMPERATURE (°C)
CASE 90-05
MJE20SO
MJE20S1
MJE20SJ
MJ62093
MJE2100.
MUE2101
MJE2102
MJEJ103
CASE 199-04
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use,
NJ Semi-Conductors encourages customers to verity that datasheets nre current before placing orders.
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