PDMB200B12C2 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Dual 200A 1200V

IGBT MODULE Dual 200A 1200V
PDMB200B12C2
ç
ç
ç
ç
ç
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
ç
10
VCC=600V
ç
IC=200A
5 _VGE=±15V
ç
TC=25℃
ç
2
ç
ç
1
toff
tr
ton
ç
0.5
tf
ç
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
400
TC= 2 5 ℃
TC=125℃
300
200
ç
0.2
100
ç
ç
0.1
ç
0.05
1
2
ç
5
10
20
50
100 200
Series Gate Impedance RG (Ω)
ç
00
1
2
3
4
Forward Voltage VF (V)
ç
ç
Fig.9- Reverse Recovery Characteristics (Typical)
Fig.10- Reverse Bias Safe Operating Area
ç
1000
IF=200A
ç
TC=25℃
500
ç
ç
200
ç
trr
ç
100
ç
50
ç
ç
20
ç
IRrM
ç
10
ç
5
0
200
400
600
800
1000
1200
ç
-di/dt (A/μs)
ç
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
RG=2Ω
VGE=±15V
TC≦125℃
400
800
1200
1600
Collector to Emitter Voltage V CE (V)
ç
Fig.11- Transient Thermal Impedance
ç
1
ç
5x10 ^-1
ç
2x10 ^-1
ç
1x10 ^-1
ç
5x10 ^-2
ç
FRD
IGBT
ç
2x10 ^-2
ç
1x10 ^-2
ç
5x10 ^-3
ç
2x10 ^-3
ç
TC=25℃
1x10 ^-3
ç
1 Shot Pulse
5x10 ^-4
10 ^-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10 ¹
Time t (s)