PDMB200B12C2 Datasheet, PDF (2/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Dual 200A 1200V

IGBT MODULE Dual 200A 1200V
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Fig.1- Output Characteristics (Typical)
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400
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VGE = 2 0 V
12V
TC=25℃
10V
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15V
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300
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9V
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200
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8V
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100
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7V
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0
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0
2
4
6
8
10
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Collector to Emitter Voltage VCE (V)
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16
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14
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12
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10
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Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125℃
IC= 1 0 0 A
400A
200A
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8
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6
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4
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2
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0
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0
4
8
12
16
20
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Gate to Emitter Voltage VGE (V)
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Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
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100000
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50000
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20000
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10000
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VGE = 0 V
f=1MHZ
TC= 2 5 ℃
Cies
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5000
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2000
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1000
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500
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200
Coes
Cres
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100 _{0.1 0.2}
0.5 1 2
5 10 20
50 100 200
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Collector to Emitter Voltage VCE (V)
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ç
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Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC= 2 5 ℃
IC=100A
400A
14
200A
12
10
8
6
4
2
00
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=3Ω
TC=25℃
700
14
600
12
500
10
400
8
VCE=600V
300
6
400V
200
4
200V
100
2
0
0
0
300
600
900
1200
1500
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
1 _tOFF
VCC=600V
RG= 2.0 Ω
VGE=±15V
TC=25℃
0.8
0.6
tf
0.4
0.2 _tON
0 ^tr
0
50
100
150
200
Collector Current IC (A)
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