PDMB200B12C2 Datasheet, PDF (1/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Dual 200A 1200V

IGBT MODULE Dual 200A 1200V
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CIRCUIT
PDMB200B12C2
OUTLINE DRAWING
4- fasten- tab No 110
Dimension(mm)
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heat sink
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Symbol
VCES
VGES
IC
IC
PC
Tj
Tstg
VISO
FTOR
PDMB200B12C2
1200
+/ - 20
200
400
960
-40 to +150
-40 to +125
2500
2.04
Approximate Weight : 320g
Unit
V
V
A
W
°C
°C
V
N•m
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Switching Time
Turn-on Time
Fall Time
Turn-off Time
ICES
VCE=1200V,VGE=0V
-
-
4.0
mA
IGES
VGE=+/- 20V,VCE=0V
-
-
1.0
µA
VCE(sat) IC=200A,VGE=15V
-
1.9
2.4
V
VGE(th) VCE=5V,IC=200mA
4.0
-
8.0
V
C ies VCE=10V,VGE=0V,f=1MHz
-
16,600
-
pF
̓r
̓on
̓f
̓off
VCC= 600V
RL= 3 ohm
RG= 2 ohm
VGE= +/- 15V
ʵ
0.25
0.45
ʵ
ʵ
0.40
0.25
0.7
0.35
µs
ʵ
0.80
1.10
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Forward Current
DC
IF
1 ms
IFM
Rated Value
200
400
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=200A,VGE=0V
IF=200A,VGE=-10V,di/dt=400A/µs
Symbol
Test Condition
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
-
1.9
2.4
V
-
0.2
0.3
µs
Min. Typ. Max. Unit
-
-
-
-
0.125
0.24
°C/W