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| 3N60 Datasheet, PDF (7/9 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | |||
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SEMICONDUCTOR
â TYPICAL CHARACTERISTICS
Fig.7 Breakdown voltage variation vs.
junction temperature
1.2
1.1
1.0
0.9
Note:
1.VGS=0V
2.ID=250µA
0.8
-100 -50
0
50 100 150 200
Junction temperature, TJ (°C)
Fig.9 Transient thermal response curve
1
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single pulse
0.01
10-5 10-4 10-3
Notes:
1.Rth(j-c)=1.18°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-Tc=PDMÃRth(j-c)(t)
10-2 10-1
100 101
Square wave pulse duration, t1 (SEC)
Fig.11 Safe operating area - 600V
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
100
10ms
DC
10-1
Notes:
1.TJ=25°C
2.TJ=150°C
3.Single pulse
10-2
100
101
102
600103
Drain to Source voltage, VDS (V)
3N60 Series RRooHHSS
Nell High Power Products
Fig.8 On-resistance variation vs.
junction temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50
0
50 100 150 200
Junction temperature, TJ (°C)
Fig.10 Maximum drain current vs.
case temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100 125 150
Case temperature, TC (°C)
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Page 7 of 9
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