3N60 Datasheet, PDF (6/9 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.1 On-state characteristics
10
VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
1
6.0V
Bottorm:5.5V
7
6.5
6
5.5
0.1
Notes:
1.250µs Pulse Test
2.Tc=25°C
0.1
1
10
Drain-to-source voltage, V_DS (V)
Fig.3 On-resistance variation vs.
drain current and gate voltage
6
5
4
V_GS=20V
3
VGS=10V
2
1
Notes:T_J=25°C
0
0 2 4 6 8 10 12 14
Drain current, I_D (A)
Fig.5 Capacitance characteristics
(non-repetitive)
600
500
400
300
200
100
CISS=CGS+CGD (CDS=shorted)
COSS=CDS+CGD CRSS=CGD
CISS
COSS
C_RSS
Notes:
1.V_GS=0V
2.f=1MHz
0
0.1
1
10
Drain-source voltage, V_DS (V)
3N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
10
1
0.1
2
Notes:
1.V_DS=50V
2.250µs Pulse Test
4
6
8
10
Gate-source voltage, V_GS (V)
Fig.4 Reverse drain current vs.
source-drain voltage
10
1
Notes:
1.V_GS=0V
2.250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source to drain voltage, V_SD (V)
Fig.6 Gate charge characteristics
12
10
8
6
4
2
0
0
V_DS=300V ^VDS=480V
V_DS=120V
2
4
6
8
10
Total gate charge, Q_G (nC)
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