3N60 Datasheet, PDF (3/9 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

SEMICONDUCTOR
3N60 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. ^{Typ. Max.}
V_(BR)DSS Drain to Source breakdown voltage
I_D=250µA,V_GS=0V
600
∆V_(BR)DSS/∆T_J Breakdown voltage temperature coefficient
I_DSS
Drain to source leakage current
I_GSS
R_DS(ON)
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
I_D=250µA,V_DS=V_GS
V_DS=600V, V_GS=0V T_C=25°C
V_DS=480V, V_GS=0V T_C=125°C
V_GS=30V,V_DS=0V
V_GS=-30V,V_DS=0V
I_D=1.5A,V_GS=10V
0.6
10.0
100
100
-100
2.8 3.6
V_GS(TH) Gate threshold voltage
V_GS=V_DS,I_D=250µA
2.0
4.0
C_ISS
Input capacitance
350 450
C_OSS
Output capacitance
V_DS=25A, V_GS=0V, f=1MHz
50 65
C_RSS
Reverse transfer capacitance
5.5 7.5
t_d(ON)
t_r
t_d(OFF)
Turn-on delay time
Rise time
Turn-off delay time
V_DD=300V, V_GS=10V,
I_D=3A, R_GS=25Ω (Note 1, 2)
10 30
30 70
20 50
t_f
Q_G
Q_GS
Q_GD
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller cgarge)
V_DD=480V,V_GS=10V,
I_D=3A (Note 1,2)
30 70
10 13
2.6
5
UNIT
V
V/°C
µA
nA
Ω
V
pF
ns
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
V_SD
Diode forward voltage
I_SD = 3A, V_GS = 0V
1.4
V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
3
diode in the MOSFET
D (Drain)
I_SM
Pulsed source current
t_rr
Reverse recovery time
Q_rr
Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
G
(Gate)
S (Source)
I_SD = 3A, V_GS = 0V,
dI_F/dt = 100A/µs
A
12
210
ns
1.2
µC
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