IRF830 Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

SEMICONDUCTOR
10
IRF830 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
1
D = 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
10-²
10-₅
10-⁴
Single pulse
(Thermal response)
10-³
10-²
PDM
t1
t2
Notes:
1. Duty factor, D = t₁/ t₂
2. Peak T_J = P_DM * R_th(j-c) +T_C
0.1
1
10
Rectangular Pulse Duration , t₁ (seconds)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
V_DS
V_GS
R_G
R_D
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- ^VDD
V_DS
90%
10%
V_GS
t_d(ON)
t_R
t_d(OFF)
t_F
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
L
V_DS
R_G
10V
t_P
D.U.T.
l_AS
0.01Ω
BV_DSS
l_AS
+
- ^VDD
l_D(t)
A
V_DD
t_p
Vary t_p to obtain required I_AS
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V_DS(t)
Time