 English |
|
|
|
|
|
|
|
| IRF830 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated | |||
| |||
| ◁ |
SEMICONDUCTOR
IRF830 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Rth(c-s)
Rth(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
Min.
Typ.
0.5
Max.
1.70
62
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
STATIC
V(BR)DSS
â² â² V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
IDSS
Drain to source leakage current
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
gfS
Gate threshold voltage
Forward transconductance
DYNAMIC
CISS
Input capacitance
COSS
Output capacitance
CRSS
td(ON)
Reverse transfer capacitance
Turn-on delay time
tr
Rise time
td(OFF)
Turn-off delay time
VGS = 0V, ID = 250µA
ID = 1mA, referenced to 25°C
VDS=500V, VGS=0V TC = 25°C
VDS=400V, VGS=0V TC=125°C
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = 10V, lD = 2.7A (Note 1)
VGS=VDS, ID=250μA
VDS=50V, ID=2.7A
VDS = 25V, VGS = 0V, f =1MHz
VDD = 250V, ID = 3.1A,RD = 79Ω,
VGS = 10V, RG=12Ω (Note 1)
tf
LD
LS
QG
QGS
QGD
Fall time
Internal drain inductance
Internal source inductance
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Between lead, 6mm from
package and center of die
VDS = 400V, VGS = 10V, ID = 3.1A
Min.
500
2
2.5
Typ.
0.61
610
160
68
8.2
16
42
16
4.5
7.5
Max. UNIT
25
250
100
-100
1.5
4
V
V/ºC
μA
nA
Ω
V
S
pF
ns
nH
38
5
nC
22
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Is(ISD)
Diode forward voltage
Continuous source to drain current
ISD = 4.5A, VGS = 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
1.6
V
4.5
ISM
Pulsed source current
G
(Gate)
A
18
trr
Reverse recovery time
Qrr
Reverse recovery charge
tON
Forward turn-on time
IS= 3.1A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
320 640
ns
1.0 2.0
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ⤠300μs, duty cycle ⤠2%.
www.nellsemi.com
Page 2 of 7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese