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| I2N60 Datasheet, PDF (5/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET | |||
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SEMICONDUCTOR
â TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
Top:
VGS
15V
10V
8V
101
7V
6.5V
6V
Bottom: 5.5V
100
10-1
10-1
Notes:
1. 250µs pulse test
2. TC = 25°C
100
101
Drain Source voltage, VDS (V)
I2N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
101
100
10-1
2
150°C
25°C
-55°C
Notes:
1. VDS=50V
2. 250µs pulse width
4
6
8
10
Gate-Source voltage, VGS (V)
Fig.3 On-Resistance variation vs.
Drain current and Gate voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
VGS = 10V
VGS = 20V
5 10 15 20 25 30 35
Drain current, lD (A)
Fig.5 Capacitance characteristics
3000
2400
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgs
Crss = Cgd
1800
1200
600
Coss
Crss
Ciss
Notes:
1. VGS=0V
2. f=1MHz
0
10-1
100
101
Drain-Source Voltage, VDS (V)
Fig.4 Body diode forward voltage variation vs
Source current and Temperature
101
150°C
100
25°C
Notes:
1. VGS=0V
2. 250µs pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain voltage, VSD (V)
Fig.6 Gate charge characteristics
12
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
Notes:
1. lD=12A
0
0 5 10 15 20 25 30 35 40 45
Total gate charge ,QG (nC)
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Page 5 of 7
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