I2N60 Datasheet, PDF (2/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_th(j-c)
Thermal resistance, junction to case
R_th(j-a)
Thermal resistance, junction to ambient
TO-220AB
TO-220F
TO-220AB
TO-220F
Min. Typ. Max.
0.56
2.4
62.5
62.5
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
OFF CHARACTERISTICS
V_(BR)DSS
Drain to source breakdown voltage
I_D = 250µA, V_GS = 0V
600
▲ ▲ ^V(BR)DSS^{/ T}J ^{Breakdown voltage temperature coefficient I}D ^{= 250µA, V}DS ^=VGS
I_DSS
Drain to source leakage current
V_DS=600V, V_GS=0V
V_DS=480V, V_GS=0V
T_C = 25°C
T_C=125°C
I_GSS
Gate to source forward leakage current
Gate to source reverse leakage current
V_GS = 30V, V_DS = 0V
V_GS = -30V, V_DS = 0V
ON CHARACTERISTICS
V
0.7
V/ºC
10
μA
100
100
nA
-100
R_DS(ON)
Static drain to source on-state resistance
V_GS(TH)
Gate threshold voltage
DYNAMIC CHARACTERISTICS
V_GS = 10V, l_D = 6A
V_GS=V_DS, I_D=250μA
0.6 0.8 Ω
2
4
V
C_ISS
C_OSS
Input capacitance
Output capacitance
V_DS = 25V, V_GS = 0V, f =1MHz
1480 1900
200 270 pF
C_RSS
Reverse transfer capacitance
R_G
Gate resistance
SWITCHING CHARACTERISTICS
V_DS = 0V, V_GS = 0V, f =1MHz
25
35
0.2
1.2 Ω
t_d(ON)
t_r
t_d(OFF)
Turn-on delay time
Rise time
Turn-off delay time
V_DD = 300V, V_GS = 10V
I_D = 12A, R_GS = 25Ω (Note1,2)
30
70
115 240
ns
95 200
t_f
Q_G
Q_GS
Q_GD
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V_DD = 480V, V_GS = 10V
I_D = 12A, (Note1,2)
85 180
42
54
8.6
nC
21
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