I2N60 Datasheet, PDF (3/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
V_SD
Diode forward voltage
I_SD = 12A, V_GS = 0V
1.4
V
I_S(I_SD)
Continuous source to drain current
I_SM
Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
12
A
48
S (Source)
t_rr
Reverse recovery time
Q_rr
Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
I_SD = 12A, V_GS = 0V,
dI_F/dt = 100A/µs
380
ns
3.5
μC
ORDERING INFORMATION SCHEME
Current rating, I_D
12 = 12A
MOSFET series
N = N-Channel
Voltage rating, V_DS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
12 N 60 A
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
V_DS
-
+
-
L
R_G
Driver
VDD
* ^{dv/dt controlled by RG}
V_GS
Same Type
as D.U.T.
* ^lSD ^{controlled by pulse period}
* ^{D.U.T.-Device under test}
V_GS
(Driver)
l_SD
(D.U.T)
V_DS
(D.U.T)
P.W.
Period
P.W.
D=
Period
V_GS=10V
lFM, Body Diode forward current
di/dt
l_RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V_DD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 3 of 7