IRF640 Datasheet, PDF (4/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

SEMICONDUCTOR
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
3000
2500
2000
VGS = 0V, f =1MHZ
Ciss = Cgs +Cgd (Cds = shorted )
Crss = Cgd
Coss = Cds +Cgd
1500
Ciss
1000
500
Coss
Crss
0
10⁰
10¹
Drain-to-Source voltage , V_DS (volts)
IRF640 Series RRooHHSS
Nell High Power Products
Fig.6 Typical source-drain diode forward
voltage
150°C
25°C
10¹
10⁰
V_GS = 0V
0.5
0.7
0.9
1.1
1.3
1.5
Source-to-drain voltage, V_SD (volts)
Fig.7 Typical gate charge vs. gate-to-source
voltage
20
lD = 18A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
For test circuit
See figure 13
0
0
15
30
45
60
75
Total gate charge , Q_G (nC)
Fig.8 Maximum safe operating area
10³
Operation in This Area is Limited by RDS(ON)
10²
10µs
100µs
10
1ms
1
0.1
0.1 ^²
Note:
1. T_C = 25°C
2. TJ = 150°C
3. Single Pulse
⁵ ₁ ² ⁵ ₁₀ ²
10ms
⁵ _10² ² ⁵ _10³
Drain-to-Source voltage, V_DS (volts)
Fig.9 Maximum drain current vs.
Case temperature
20
16
12
9
4
0
25
50
75
100
125
150
Case temperature, T_C (°C)
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