IRF640 Datasheet, PDF (2/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

SEMICONDUCTOR
IRF640 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R_th(j-c)
R_th(c-s)
R_th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
Min.
Typ.
0.5
Max.
1.0
60
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)DSS
▲ ▲ ^V(BR)DSS^{/ T}J
I_DSS
I_GSS
R_DS(ON)
V_GS(TH)
g_fS
C_ISS
C_OSS
C_RSS
t_d(ON)
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
V_GS = 0V, I_D = 250µA
I_D = 1mA, referenced to 25°C
V_DS=200V, V_GS=0V T_C = 25°C
V_DS=160V, V_GS=0V T_C=125°C
V_GS = 20V, V_DS = 0V
V_GS = -20V, V_DS = 0V
V_GS = 10V, l_D = 11A (Note 1)
V_GS=V_DS, I_D=250μA
V_DS=50V, I_D=11A
V_DS = 25V, V_GS = 0V, f =1MHz
t_r
t_d(OFF)
Rise time
Turn-off delay time
V_DD = 100V, I_D = 18A,R_D = 5.4Ω,
V_GS = 10V, R_G=9.1Ω (Note 1)
t_f
L_D
L_S
Q_G
Q_GS
Q_GD
Fall time
Internal drain inductance
Internal source inductance
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Between lead, 6mm from
package and center of die
V_DS = 160V, V_GS = 10V, I_D = 18A
Min.
200
2
6.7
Typ.
0.29
0.15
1300
430
130
12
50
45
35
4.5
7.5
Max. UNIT
V
V/ºC
25
μA
250
100 _nA
-100
0.18 Ω
4
V
S
pF
ns
nH
70
12 nC
40
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
V_SD
I_s(I_SD)
Diode forward voltage
Continuous source to drain current
I_SD = 18A, V_GS = 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
2
V
18
I_SM
Pulsed source current
G
(Gate)
A
72
t_rr
Reverse recovery time
Q_rr
Reverse recovery charge
t_ON
Forward turn-on time
I_SD = 18A, V_GS = 0V,
dI_F/dt = 100A/µs
S (Source)
300 610
ns
3.4
7
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
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