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| IRF640 Datasheet, PDF (3/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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SEMICONDUCTOR
ORDERING INFORMATION SCHEME
IRF640 Series RRooHHSS
Nell High Power Products
IRF 640 A
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
18A / 200V
Package type
A = TO-220AB
H = TO-263 (D2PAK)
Fig.1 Typical output characteristics,
TC=25°C
101
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
100
10-1
10-1
4.5V
100
20µs pulse width
TC=25°C
101
Drain-to-Source voltage , VDS (volts)
Fig.2 Typical transfer characteristics
101
150°C
25°C
100
10-1
VDS=50V
20µs pulse width
4
5
6
7
8
9
10
Gate-to-Source voltage , VGS (volts)
Fig.3 Typical output characteristics,
TC=150°C
101
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
100
4.5V
10-1
10-1
20µs pulse width
TJ=150°C
100
101
Drain-to-Source voltage , VDS (volts)
Fig.4 Normalized On-Resistance vs. Temperature
3
lD =18A
2.5
2
1.5
1
0.5
VGS=10V
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature,TJ (°C)
www.nellsemi.com
Page 3 of 7
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