2SC4110B Datasheet, PDF (4/4 Pages) Nell Semiconductor Co., Ltd – Silicon NPN triple diffusion planar transistor

SEMICONDUCTOR
Fig.6 Switching time - l_C characteristics
10
7
tstg
5
3
2
VCC = 200V
lC = 5lB1 = -2.5lB2
R load
1.0
7
5
3
t_on
2
tf
0.1
7
5
57
2 3 57
2 3 57
23 5
0.1
1.0
10
Collectorc current, l_C (A)
Fig.8 Reverse bias SOA
100
7
5
lCP
3
2
10
7
5
3
2
1.0
7
5 I_B2 =-4A const.
3 L=100µH
2 _{TC =25°C}
0.1
5 7 ₁₀₀
2
3
5 7 ₁₀₀₀
Collector-to-emitter voltage, V_CE (V)
2SC4110B Series RRooHHSS
Nell High Power Products
Fig.7 Forward bias SOA
100
5
3
2
10
5
3
2
I_CP =40A
I_C =25A
10m
DC _{ope rat ion}
s
1.0
5
3
2
0.1
TC =25°C
Single pulse
5
57
10
23
S/B
Lim
it _{e d}
57
100
≤50µs
100µs
2 3 57
1000
Collector-to-emitter voltage, V_CE (V)
Fig.9 P_c-T_a derating
3.0
2.5
2.0
No
1.5
heat _sink
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient temperature, Ta (°C)
Fig.10 P_c-T_c derating
180
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160
Case temperature, T_c (°C)
Fig.11 Thermal resistance
1.0
TC =25°C
7
5
3
2
0.1
7
5
3
2
2 3 57 2 3 57 2 3 57 2 3 57
0.1
1.0
10
100
1000
Time, t(ms)
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