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2SC4110B Datasheet, PDF (3/4 Pages) Nell Semiconductor Co., Ltd – Silicon NPN triple diffusion planar transistor
SEMICONDUCTOR
2SC4110B Series RRooHHSS
Nell High Power Products
Switching time test circuit
PW=20µs
D.C. ≤1%
INPUT
lB1 RB
lB2
VR
50Ω
+
100µF
OUTPUT
RL
+
470µF
Fig.2 lC - VBE(on) Temperature characteristics
28
24
Ta=120°C
Ta=25°C
20
Ta=-40°C
16
VCE = 5V
12
8
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-emitter on-state Voltage, VBE(on) (V)
Fig.1 lC - VCE characteristics
50
4500mA
4000mA
3500mA
40 3000mA
30
20
10
5000mA
2500mA
2000mA
1500mA
1000mA
500mA
lB = 0
0
0
2
4
6
8
10
Collector-Emitter Voltage, VCE (V)
Fig.3 hFE - lC characteristics
200
100
70
50
30
20
Ta=120°C
Ta=25°C
Ta=-40°C
VCE = 5V
10
7
5
3
2 23 5
23 5
23 5
23 5
0.01
0.1
1.0
10
Collector current, lC (A)
Fig.4 VCE(sat) - lC characteristics
3
2
lC / IB=5
1.0
7
5
3
Ta=120°C
2
Ta=25°C
Ta=-40°C
0.1
7
5
3
23 5
23 5
23 5
23 5
0.01
0.1
1.0
10
Collector current, lC (A)
Fig.5 VBE(sat) - lC Temperature characteristics
10
7
lC / IB=5
5
3
2
Ta=120°C
Ta=25°C
1.0
Ta=-40°C
7
5
3
2
23 5
23 5
23 5
23 5
0.01
0.1
1.0
10
Collector current, lC (A)
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