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| 2SC4110B Datasheet, PDF (2/4 Pages) Nell Semiconductor Co., Ltd – Silicon NPN triple diffusion planar transistor | |||
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SEMICONDUCTOR
2SC4110B Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
VCE(SUS)
VCE(sat)
VBE(sat)
fT
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
hFE1
hFE2
hFE3
Collector cutoff current
VCB = 400V, lE = 0
Emitter cutoff current
VEB = 5V, lC = 0
Collector to emitter sustaining voltage lC = 10A, L = 200μH, lBI = 1A,
lB2 = -4A
Collector to emitter saturation voltage lC = 16A, lB = 3.2A
Base to emitter saturation voltage
Transition frequency
(Gain-Bandwidth product)
lC = 16A, lB = 3.2A
VCE = 10V, lC = 3.2A
Output capacitance
VCB = 10V, f= 1MHz
Collector to base breakdown voltage lC = 1mA, lE = 0
Collector to emitter breakdown voltage lC = 10mA, RBE = â
Emitter to base breakdown voltage
lE = 1mA, IC = 0
Turn-on time
Storage time
Fall time
lC = 20A, lB1 = 4.0A, lB2 = -8A
VCC = 200V, RL = 10Ω
Rank-L
VCE = 5V, IC = 3.2A Rank-M
DC current gain
Rank-N
VCE = 5V, IC = 16A
VCE = 5V, IC = 10mA
MIN.
400
500
400
7
15
20
30
10
10
VALUE
TYP.
20
300
MAX.
10
10
0.8
1.5
0.5
2.5
0.3
30
40
50
UNIT
µA
V
V
MHz
pF
V
µs
ORDERING INFORMATION SCHEME
2SC 4110 B - M
Transistor series
NPN Type
Current & Voltage rating, IC & VCEO
25A / 400V
Package type
B = TO-3PB
DC current gain rank, hFE1
L = 15 ~ 30
M = 20 ~ 40
N = 30 ~ 50
www.nellsemi.com
Page 2 of 4
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