N-80EPU12 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 80 A

SEMICONDUCTOR
N-80EPU12 Series RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.35
0.30
0.25
0.20
0.15
D = 0.9
0.7
0.5
0.3
0.10
0.05
0.1
0.05
0
10^-5
10^-4
Single pulse
10^-3
10^-2
Rectangular pulse duration (seconds)
Note :
t₁
t₂
Duty Factor D = t₁/t₂
Peak T_J = P_DM x Z_θJC + T_C
10^-1
1
Fig.2 Forward current vs. forward voltage
200
180
160
140
120
100
80
60
40
20
0
0
TJ = 175°C
TJ = 125°C
TJ = 25°C
TJ = -55°C
1
2
3
4
Anode-to-cathode voltage-V_F (V)
Fig.4 Reverse recovery charge vs. current
rate of change
8000
7000
TJ = 125°C
VR = 800V
160A
6000
80A
5000
4000
40A
3000
2000
1000
0
0
200 400 600 800 1000 1200
Current rate of change-di_F/dt(A/µs)
Fig3. Reverse recovery time vs. current rate
of change
500
TJ = 125°C
VR = 800V
400
160A
300
200
80A
40A
100
0
0
200 400 600 800 1000 1200
Current rate of change-di_F/dt(A/µs)
Fig.5 Reverse recovery current vs. current
rate of change
50
TJ = 125°C
VR = 800V
40
160A
80A
40A
30
20
10
0
0
200 400 600 800 1000 1200
Current rate of change-di_F/dt(A/µs)
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