N-80EPU12 Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 80 A

SEMICONDUCTOR
N-80EPU12 Series RRooHHSS
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
(T_J = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
I_F = 0.5A, I_R = 1A, I_RR=0.25A
-
35
40
Reverse recovery time
I_F = 1A, dI_F/dt = 100 A/µs, V_R=30V
-
30
-
t_rr
T_J = 25°C
-
330
-
Peak recovery current
Reverse recovery charge
l_RRM
Q_rr
T_J = 125°C
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
-
I_F = 80 A
-
dI_F/dt = 200 A/µs
V_R = 800 V
-
-
-
430
-
5
-
13
-
740
-
3450
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
MIN.
-
-
-
-
0.6
(5)
TYP.
-
MAX.
0.3
0.39
-
5.9
-
0.22
-
1.2
-
(10)
80EPU12
80APU12
UNITS
°C/W
g
oz.
N⋅ m
(lbf . in)
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