N-80EPU12 Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 80 A

SEMICONDUCTOR
N-80EPU12 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 80 A
FEATURES
Ultrafast recovery
175 °C operating junction temperature
Designed and qualified for industrial level
N-80EPU12
-
N-80APU12
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
Cathode
to base
2
Cathode
to base
2
1
Cathode
3
Anode
TO-247AC modified
PRODUCT SUMMARY
t_rr
I_F(AV)
V_R
1
Anode
3
Anode
TO-247AB
35 ns
80 A
1200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
V_R
l_F(AV)
l_FSM
l_FRM
T_j, T_Stg
TEST CONDITIONS
T_C = 110 °C
T_C = 25 °C
Square wave, 20 kHz
VALUES
1200
80
610
129
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T_J = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_r
l_R = 100µA
1200
l_F = 80A
-
Forward voltage
V_F
l_F = 160A
-
l_F = 80A, T_J = 125°C
-
V_R = V_R rated
-
Reverse leakage current
l_R
T_J = 150°C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 200V
-
TYP.
-
2.8
3.3
2.1
-
-
50
MAX.
-
3.3
-
-
100
500
-
UNITS
V
µA
pF
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