40EPU06 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
40EPU06 Series RRooHHSS
Nell High Power Products
Fig.3a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.70
D = 0.9
0.60
0.50
0.7
0.40
0.5
0.30
0.20
0.3
0.10
0.1
0.05
0
10^-5
10^-4
SINGLE PULSE
10^-3
10^-2
Rectangular pulse duration (seconds)
Note:
t1
t2₂
Duty Factor D =t₁/t₂
Peak T_J = P_DM xZ_θJC+T_C
10^-1
1.0
Fig.3b Transient thermal impedance model
Junction
temp (°C)
Power
(watts)
Case temperature (°C)
RC MODEL
0.289
0.381
0.00448
0.120
Fig.4 Junction capacitance vs. reverse voltage
200
180
160
140
120
100
80
60
40
20
0
1
10
100 200
reverse voltage, V_R (V)
Fig.5 Max. allowable case temperature
Vs. average forward current
180
160
DC
140
Square wave (D = 0.5)
120 ^{Rated VR applied}
100
See note (1)
80
0 10 20 25 30 35 40 45 50 60
Average forward current I_F(AV) (A)
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