40EPU06 Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
40EPU06 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 40A / 600V
FEATURES
Ultrafast recovery
Planar FRED Chip
175 °C operating junction temperature
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
40EPU06
40APU06
Cathode
to base
2
Cathode
to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
1
Cathode
3
Anode
TO-247AC modified
1
Anode
3
Anode
TO-247AB
PRODUCT SUMMARY
t_rr
I_F(AV)
V_R
22 ns
40 A
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
V_R
l_F(AV)
l_FSM
T_j, T_Stg
TEST CONDITIONS
T_C = 110 °C
T_C = 25 °C
VALUES
600
40
360
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T_J = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
Breakdown voltage
V_BR
l_R = 100µA
600
l_F = 40A
-
Forward voltage
V_F
l_F = 80A
-
l_F = 40A, T_J = 125°C
-
V_R = V_R rated
-
Reverse leakage current
l_R
T_J = 150°C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 200V
-
TYP.
-
1.50
1.8
1.20
-
-
36
MAX.
-
1.70
-
-
25
500
-
UNITS
V
µA
pF
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