40EPU06 Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
40EPU06 Series RRooHHSS
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
(T_J = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
I_F = 0.5A, I_R = 1A, I_RR=0.25A (RG#1 CKT)
-
36
45
I_F = 1A, dI_F/dt = 100 A/µs, V_R=30V, T_J =25°C
-
22
-
Reverse recovery time
t_rr
T_J = 25°C
-
25
-
Peak recovery current
Reverse recovery charge
l_RRM
Q_rr
T_J = 125°C
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
-
165
-
I_F = 40 A
-
3
-
dI_F/dt = 200 A/µs
V_R = 400 V
-
6
-
-
35
-
-
480
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to ambient
R_thJA
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
MIN.
-
-
-
-
0.6
(5)
TYP.
-
MAX.
0.67
40
0.3
-
5.5
-
0.2
-
1.2
-
(10)
40EPU06
40APU06
UNITS
°C/W
g
oz.
N⋅ m
(lbf . in)
Fig.1 Forward current vs. forward voltage
120
100
80
60
T_J =125°C
40
T_J =175°C
20
0
0 0.6 0.9 1.2
T_J =25°C
T_J =-55°C
1.5 1.8 2.1
Anode-to-cathode voltage, V_F (V)
Fig.2 Typical values of reverse current vs.
reverse voltage
1000
100
10
1
0.1
0.01
0.001
0.0001
0
TJ=175°
T_J=150°
TJ=125°
T_J=100°
T_J=25°
100 200 300 400 500 600
Reverse voltage, V_R (V)
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