30EPU12 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
30EPU12 Series RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
1.0
0.5
0.1
0.05
0.01
0.005
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
Note:
t1
t2₂
Duty Factor D =t₁/t₂
Peak T_J = P_DM xZ_thJC+T_C
1.0
10
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
200
180
160
140
120
T_J =175°C
100
80
T_J =125°C
60
T_J =25°C
40
T_J =-55°C
20
0
0
1
2
3
4
5
Anode-to-cathode voltage, V_F (V)
Fig.3 Reverse recovery time vs. current rate of change
600
T_J =125°C
VR =800V
500
60A
400
30A
300
15A
200
100
0
0 200 400 600 800 1000 1200
Current rate of change, -di_F/dt (A/μs)
Fig.4 Reverse recovery charge vs. current rate of change Fig 5. Reverse recovery current vs. current rate of change
5000
4000
TJ =125°C
VR =800V 60A
3000
2000
1000
30A
15A
0
0 200 400 600 800 1000 1200
Current rate of change, -di_F/dt (A/μs)
35
T_J =125°C
VR =800V
30
60A
25
30A
20
15
15A
10
5
0
0 200 400 600 800 1000 1200
Current rate of change, -di_F/dt (A/μs)
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