30EPU12 Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
30EPU12 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode
30A / 1200V
FEATURES
Ultrafast recovery
150°C operating junction temperature
Designed and qualified for industrial level
Compliant to RoHS
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
30EPU12
30APU12
Cathode
to base
2
Cathode
to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/
RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
1
Cathode
3
Anode
TO-247AC modified
PRODUCT SUMMARY
t_rr
I_F(AV)
V_R
1
Anode
3
Anode
TO-247AB
36 ns
30 A
1200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
V_R
l_F(AV)
l_FSM
T_j, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
VALUES
1200
30
280
- 55 to 150
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T_J = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
Breakdown voltage
V_BR l_R = 100µA
1200
l_F = 30A
-
Forward voltage
V_F
l_F = 60A
-
l_F = 30A, T_J = 125°C
-
V_R = V_R rated
-
Reverse leakage current
l_R
T_J = 150°C, V_R = V_R rated
-
Junction capacitance
Series inductance
C_T
V_R = 200V
-
L_{S Measure lead to lead 5mm from package body}
-
TYP.
-
1.95
2.60
-
1.0
-
30
10
MAX.
-
2.35
-
2.00
25
1000
-
-
UNITS
V
µA
pF
nH
www.nellsemi.com
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