30EPU12 Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
30EPU12 Series RRooHHSS
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
(T_J = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
I_F = 0.5A, I_R = 1A, I_RR=0.25A (RG#1 CKT)
-
52
60
I_F = 1A, dI_F/dt = 200 A/µs, V_R=30V, T_J =25°C
-
36
-
Reverse recovery time
t_rr
T_J = 25°C
-
320
-
Peak recovery current
l_RRM
Reverse recovery charge Q_rr
T_J = 125°C
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
-
435
-
I_F = 30 A
-
4
-
dI_F/dt = 200 A/µs
V_R = 800 V
-
9
-
-
545
-
-
2100
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R_thJA
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AB
MIN.
-
-
-
-
-
0.6
(5)
TYP.
0.5
MAX.
0.8
-
40
0.4
-
5.5
-
0.2
-
1.2
-
(10)
30EPU12
30APU12
UNITS
°C/W
g
oz.
N⋅ m
(lbf . in)
www.nellsemi.com
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