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| TIP41 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,40-100V,65W) | |||
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SEMICONDUCTOR
TIP41 (NPN) Series
TIP42 (PNP) Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
Off Characteristics
TIP41,TIP42
VCEO(SUS) Collector to emitter sustaining voltage (Note 1) lC = 30mA, IB=0
TIP41A,TIP42A
TIP41B,TIP42B
TIP41C,TIP42C
ICEO
Collector cutoff current
VCE = 30V, IB = 0
VCE = 60V, lB = 0
TIP41,TIP42
TIP41A,TIP42A
TIP41B,TIP42B
TIP41C,TIP42C
IEBO
Emitter cutoff current
VEB = 5V, IC = 0
ICES
Collector cutoff current
On Characteristics
VCE = 40V, VEB = 0 TIP41,TIP42
VCE = 60V, VEB = 0 TIP41A,TIP42A
VCE = 80V, VEB = 0 TIP41B,TIP42B
VCE = 100V, VEB = 0 TIP41C,TIP42C
hFE
VCE(sat)
VBE(on)
Forward current transfer ratio (DC current gain)
Collector to emitter saturation voltage (Note1)
Base to emitter voltage (Note1)
VCE = 4V, IC = 0.3A
VCE = 4V, IC = 3A
lC = 6A, lB = 0.6A
lC = 6A, VCE = 4V
Dynamic Characteristics
fT
Current gain - Bandwidth product (note 2)
hfe
Small signal current gain
Note 1. Pulsed : Pulse duration ⤠300 µS, duty cycle ⤠2.0%.
Note 2. fT = |hfe| ⢠fTEST
Note 3. For PNP type voltage and current are negative.
lC = 0.5A, VCE = 10V, ftest = 1MHz
lC = 0.5A, VCE = 10V, f = 1KHz
MIN
40
60
80
100
30
15
3.0
20
MAX
0.7
1.0
400
400
400
400
75
1.5
2.0
V
mA
µA
V
MHz
www.nellsemi.com
Page 2 of 5
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