TIP41 Datasheet, PDF (1/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,40-100V,65W)

SEMICONDUCTOR
TIP41 (NPN) Series
TIP42 (PNP) Series ^RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistor
6A/40~100V/65W
FEATURES
Complementary NPN-PNP transistors
Low collector-emitter saturation voltage
Satisfactory linearity of foward current
transfer ratio h_FE
TO-220AB package which can be installed
to the heat sink with one screw
Collector - Emitter Saturation Voltage:
V_CE(sat) = 1.5V_dc (MAX.) @ I_C = 6A
Collector - Emitter Saturation Voltage:
V_CEO(sus) = 40V_dc (Min.) - TIP41,TIP42
= 60V_dc (Min.) - TIP41A,TIP42A
= 80V_dc (Min.) - TIP41B, TIP42B
= 100V_dc (Min.) - TIP41C, TIP42C
DC Current Gain h_FE = 30 (Min.) @ I_c = 0.3A
High Current Gain - Bandwidth product
f_T = 3.0 MHz (Min.) @ I_c=0.5A
APPLICATIONS
Audio amplifier
General purpose switching and amplifier
C
B
C
E
TO-220AB
C
B
E
TIP41(NPN)
C
B
E
TIP42(PNP)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C)
SYMBOL
PARAMETER
V_CBO
Collector to base voltage (I_E = 0)
TIP41
TIP42
40
VALUE
TIP41A TIP41B TIP41C
TIP42A TIP42B TIP42C
60
80
100
UNIT
V_CEO
V_EBO
I_C
Collector to emitter voltage (I_B = 0)
Emitter to base voltage (I_C = 0)
Collector current
40
60
80
100
V
5
6
I_CM
Collector peak current (t_p < 0.3mS)
10
A
I_B
Base current
2
P_C
Collector power dissipation
@T_C = 25°C
(Derate above 25°C)
@T_A = 25°C
65 (0.52)
2.0 (0.016)
W(W/°C)
T_j
Junction temperature
T_stg
Storage temperature
150
ºC
-65 to 150
E
Unclamped inductive load energy (Note 1)
62.5
mJ
Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:
I_C = 2.5A, L = 20mH, R_BE = 100Ω, P.R.F. = 10 Hz, V_CC = 10V
THERMAL CHARACTERISTICS (T_C = 25°C)
SYMBOL
PARAMETER
R_th(j-c)
Maximum thermal resistance, junction to case
R_th(j-a)
Maximum thermal resistance, junction to ambient
VALUE
1.67
57
UNIT
ºC/W
ºC/W
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