NP80N03EDE Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 _Pulsed
100
10
TA = −50°C
25°C
75°C
150°C
1
175°C
0.1
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
TA = 175°C
75°C
1
25°C
−50°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
VGS = 4.5 V
5V
10
10 V
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
Pulsed
350
300
VGS = 10 V
250
200
5V
150
100
4.5 V
50
0
0
1.0
2.0
3.0
4.0
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
10
ID = 40 A
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100 150
Tch - Channel Temperature - °C
Data Sheet D15310EJ3V0DS
5