NP80N03EDE Datasheet, PDF (3/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Gate Leakage Current
Gate to Source Threshold Voltage
IGSS
VGS(th)
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 40 A
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 40 A
RDS(on)2
VGS = 5 V, ID = 40 A
RDS(on)3
VGS = 4.5 V, ID = 40 A
Input Capacitance
Ciss
VDS = 25 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 40 A,
Rise Time
tr
VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 1 Ω
Fall Time
tf
Total Gate Charge
QG1
ID = 80 A, VDD = 24 V, VGS = 10 V
QG2
VDD = 24 V,
Gate to Source Charge
QGS
VGS = 5 V,
Gate to Drain Charge
QGD
ID = 80 A
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V,
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
1.5 2.0 2.5 V
20 41
S
5.3 7.0 mΩ
6.8 9.0 mΩ
7.5 11 mΩ
2600 3900 pF
590 890 pF
270 490 pF
20 44 ns
12 31 ns
60 120 ns
14 35 ns
48 72 nC
28 42 nC
10
nC
14
nC
1.0
V
34
ns
22
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
Data Sheet D15310EJ3V0DS
3