NP80N03EDE Datasheet, PDF (2/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C) ^Note1
ID(DC)
±80
A
Drain Current (pulse) ^Note2
ID(pulse)
±320
A
Total Power Dissipation (TC = 25°C)
PT1
120
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg
−55 to +175
°C
IAS
50/40/9
A
EAS
2.5/160/400
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
2
Data Sheet D15310EJ3V0DS