MC-45D32CC721 Datasheet, PDF (5/16 Pages) NEC – 32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-45D32CC721
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 1 ms and then, execute Power on sequence and CBR (auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on power supply pin relative to VSS
Voltage on input pin relative to VSS
Short circuit output current
Power dissipation
Storage temperature
Symbol
VDD, VDDQ
VT
IO
PD
Tstg
Condition
Rating
Unit
–0.5 to +3.6
V
–0.5 to +3.6
V
50
mA
12
W
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Supply voltage
VDD
Supply voltage for DQ, DQS
VDDQ
Input reference voltage
VREF
Termination voltage
VTT
High level dc input voltage
VIH (DC)
Low level dc input voltage
VIL (DC)
Input differential voltage (CLK and /CLK)
VID (DC)
Input crossing point voltage (CLK and /CLK)
VIX
Operating ambient temperature
TA
Condition
MIN.
2.3
2.3
0.49 × VDDQ
VREF − 0.04
VREF + 0.15
−0.3
0.36
0.5 × VDDQ–0.2
0
TYP.
2.5
2.5
VREF
MAX.
Unit
2.7
V
2.7
V
0.51 × VDDQ
V
VREF + 0.04
V
VDD + 0.3
V
VREF − 0.15
V
VDDQ + 0.6
V
0.5 × VDDQ+0.2 V
70
°C
Capacitance (TA = 25 °C, f = 100 MHz)
Parameter
Symbol
Test condition
Input capacitance
CI1 A0 - A11, BA0, BA1, /RAS,
/CAS, /WE
CI2 CK0 - CK2, /CK0 - /CK2
CI3 CKE0
CI4 /S0, /S1
Data input/output capacitance
CI/O1
CI/O2
DM(0-8)/DQS(9-17),
DQS0 - DQS8
DQ0 - DQ63, CB0 - CB7
MIN. TYP. MAX. Unit
TBD
TBD
pF
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
pF
TBD
TBD
Preliminary Data Sheet M14900EJ1V0DS00
5