2SJ625 Datasheet, PDF (5/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −4.5 V
Pulsed
250
200
150
100
50
-0.01
TA = 125°C
75°C
25°C
−25°C
-0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −1.8 V TA = 125°C
Pulsed
250
75°C
25°C
200
−25°C
150
100
50
-0.01
-0.1
-1
-10
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
VGS = 0 V
f = 1.0 MHz
Ciss
2SJ625
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −2.5 V
Pulsed
250
200
TA = 125°C
75°C
150
25°C
−25°C
100
50
-0.01
-0.1
-1
-10
ID - Drain Current - A
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
10
-0.1
td(on)
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
-1
-10
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10
100
1
VGS = 0 V
Coss
Crss
0.1
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
0.01
0.4
0.6
0.8
1
1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet D15961EJ1V0DS
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