2SJ625 Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-12
Pulsed
-10
-8 ^{VGS = −4.5 V}
−2.5 V
-6
-4
−1.8 V
-2
0
0
-0.4 -0.8 -1.2 -1.6
-2
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-1
VDS = −10 V
ID = −1.0 mA
-0.8
-0.6
2SJ625
FORWARD TRANSFER CHARACTERISTICS
-10
VDS = −10 V
Pulsed
-1
-0.1
-0.01
TA = 125°C
75°C
25°C
−25°C
-0.001
-0.0001
0
-1
-2
-3
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
Pulsed
10
TA = −25°C
25°C
75°C
125°C
1
-0.4
-50
0
50
100
150
Tch - Channel Temperature - °C
0.1
-0.01
-0.1
-1
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
300
Pulsed
VGS = −1.8 V, ID = −1.0 A
250
VGS = −2.5 V, ID = −1.5 A
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
300
Pulsed
250
200
150
150
100
50
-50
VGS = −4.5 V, ID = −1.5 A
0
50
100
150
Tch - Channel Temperature - °C
ID = −1.5 A
100
50
0
-2
-4
-6
-8
VGS - Gate to Source Voltage - V
4
Data Sheet D15961EJ1V0DS