2SJ625 Datasheet, PDF (3/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ625
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
-10
RDS(on) Limited
(VGS = −4.5 V)
ID(pulse)
PW = 1 ms
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5
1.25
1
0.75
0.5
0.25 _{Mounted on FR-4 board,}
t ≤ 5 sec
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
-1
ID(DC)
10 ms
-0.1
Single Pulse
-0.01
Mounted on FR-4 board of
5000 mm² x 1.1 mm
-0.1
-1
-10
100 ms
5s
-100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single Pulse
W ithout board
100
Mounted on FR-4 board of
5000 mm² x 1.1 mm
10
1
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet D15961EJ1V0DS
3