2SC5745 Datasheet, PDF (5/24 Pages) NEC – NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
8
6
4
2
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN vs. FREQUENCY
35
VCE = 1 V
30
IC = 10 mA
25
20
15
10
5
0
0.1
1
10
Frequency f (GHz)
2SC5745
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
8
6
4
2
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN vs. FREQUENCY
35
VCE = 2 V
30
IC = 10 mA
25
20
15
10
5
0
0.1
1
10
Frequency f (GHz)
Data Sheet P15439EJ1V0DS
5