2SC5745 Datasheet, PDF (3/24 Pages) NEC – NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

2SC5745
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy Board
(1.08 cm² × 1.0 mm (t) )
250
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.8
200
0.6
150
0.4
100
50
0.2
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
80
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
80
60
60
40
40
20
20
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
200 µA
35
180 µA
30
160 µA
25
140 µA
120 µA
20
100 µA
15
1280 µA
10
60 µA
5
40 µA
IB = 20 µA
0
1234567
Collector to Emitter Voltage VCE (V)
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
Data Sheet P15439EJ1V0DS
3