2SC5745 Datasheet, PDF (2/24 Pages) NEC – NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

2SC5745
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO VBE = 1 V, IC = 0 mA
h Note 1
FE
VCE = 1 V, IC = 10 mA
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
S21e² VCE = 1 V, IC = 10 mA, f = 2 GHz
NF ^{VCE = 1 V, IC = 10 mA, f = 2 GHz,}
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
TY
100 to 145
MIN. TYP. MAX. Unit
–
–
100
nA
–
–
100
nA
100
–
145
–
4.0
5.5
–
GHz
3.0
4.5
–
dB
–
2.0
3.0
dB
0.7
0.8
0.9
pF
2
Data Sheet P15439EJ1V0DS