NP36P06SLG Datasheet, PDF (4/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

-150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-100
VGS = −10 V
−4.5 V
-50
Pulsed
0
0
-2
-4
-6
-8
-10
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2.5
-2
-1.5
-1
-0.5 ^{VDS = −10 V}
ID = −1 mA
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
Pulsed
70
60
50
40
VGS = −4.5 V
30
−10 V
20
10
0
-1
-10
-100
-1000
ID - Drain Current - A
NP36P06SLG
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
-10
-1
TA = −55°C
25°C
125°C
175°C
-0.1
-0.01
-0.001
0
VDS = −10 V
Pulsed
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
Pulsed
10
TA = −55°C
25°C
125°C
1
175°C
0.1
-0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
40
30
20
10
ID = −18 A
Pulsed
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
4
Data Sheet D18008EJ5V0DS