NP36P06SLG Datasheet, PDF (1/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36P06SLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP36P06SLG is P-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A)
RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
• Low input capacitance
Ciss = 3200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP36P06SLG
TO-252 (MP-3ZK)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
−60
V
m20
V
m36
A
m108
A
56
W
1.2
W
175
°C
−55 to +175 °C
23.4
A
54.8
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.68
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18008EJ5V0DS00 (5th edition)
Date Published November 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006