D18754EJ1V0DS00 Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP160N04TUG
700
600
500
400
300
200
100
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.5 1 1.5 2 2.5 3
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3.5
3
2.5
2
1.5
1
0.5
VDS = VGS
ID = 250 μA
0
-75 -25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
VGS = 10 V
Pulsed
4
3
2
1
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
TA = −55°C
1
25°C
75°C
0.1
125°C
175°C
0.01
VDS = 10 V
Pulsed
0.001
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
Tch = −55°C
25°C
100
75°C
10
1
0.1
150°C
175°C
VDS = 5 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 80 A
Pulsed
8
6
4
2
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D18754EJ1V0DS