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D18754EJ1V0DS00 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP160N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP160N04TUG-E1-AY Note
NP160N04TUG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
TO-263-7pin (MP-25ZT) typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
• High Current Rating
ID(DC) = ±160 A
(TO-263-7pin)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Energy Note2
EAS
Repetitive Avalanche Current Note3
IAR
Repetitive Avalanche Energy Note3
EAR
40
V
±20
V
±160
A
±640
A
220
W
1.8
W
175
°C
−55 to +175 °C
372
mJ
61
A
372
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. RG = 25 Ω, Tch(peak) ≤ 150°C
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.68
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18754EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007