D18754EJ1V0DS00 Datasheet, PDF (3/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP160N04TUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10000
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1000
100
R(^D_V^S(GonS)_=Li1m^{i 0itVed)}
ID(DC)
ID(pulse)
DC
PW
= _{1i 00 μs}
10
1
Tc = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage – V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 0.68°C/Wi
0.1
0.01
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
Data Sheet D18754EJ1V0DS
3