2SK1580 Datasheet, PDF (4/5 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SK1580
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
VGS = 2.5 V
Pulsed
15
TA = 150˚C
75˚C
10
25˚C
−25˚C
5
0
1
3
10
30
100
ID - Drain Current - mA
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
Ciss
10
Coss
Crss
1
VGS = 0 V
f = 1 MHZ
0.1
0.1 0.3
1
3
10 30 100
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
15
ID = 1 mA
Pulsed
10
VGS = 2.5 V
VGS = 4 V
5
0
–30 0
30 60 90 120 150
Tch - Channel Temperature - ˚C
1000
300
SWITCHING CHARACTERISTICS
VDD = 3 V
VGS = 3 V
RG = 10 Ω
100
30
10
2
tr
tf
td(off)
td(on)
10 20
100 200
ID - Drain Current - mA
4
Data Sheet D13555EJ5V0DS