2SK1580 Datasheet, PDF (1/5 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1580
SWITCHING
N-CHANNEL MOS FET
DESCRIPTION
The 2SK1580 is an N -channel vertical type MOS FET which
can be driven by 2.5 V power supply.
As the 2SK1580 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliance
including VCR cameras and headphone stereos which need
power saving.
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its high
input impedance.
• Possible to reduce the number of parts by omitting the bias
resistor.
PACKAGE DRAWING (Unit: mm)
2.1±0.1
1.25±0.1
2
1
3
Marking
ORDERING INFORMATION
PART NUMBER
2SK1580
Marking: G13
PACKAGE
SC-70 (SSP)
1. Source
2. Gate
3. Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±16
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note
ID(DC)
±100
mA
ID(pulse)
±200
mA
Total Power Dissipation (TA = 25°C)
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13555EJ5V0DS00 (5th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1991