2SK1580 Datasheet, PDF (3/5 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
180
150
120
90
60
30
0
30 60 90 120 150 180
TA - Ambient Temperature - ˚C
TRANSFER CHARACTERISTICS
100 _{VDS = 3 V}
Pulsed
10
TA = 150˚C
75˚C
1
25˚C
–25˚C
0.1
0.01
0
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate to Source Voltage - V
1000
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
VDS = 3 V
Pulsed
TA = −25˚C
25˚C
100
75˚C
150˚C
10
2SK1580
DRAIN CURRENT VS.
DRAIN TO SOURCE VOLTAGE
120
4.0 V
100
3.5 V
3.0 V
Pulsed
80
2.5 V
60
40
20
0
0
VGS = 2.0 V
1
2
37
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
VDS = 3 V
ID = 10 A
1.0
0.5
0
− 30 0
30 60 90 120 150
Tch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
ID = 1 mA
Pulsed
10
5
1
1
3
10 30 100 300 1000
ID - Drain Current - mA
0
0
5
10
15
20
25
VGS - Gate to Source Voltage - V
Data Sheet D13555EJ5V0DS
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