2SK1398 Datasheet, PDF (4/8 Pages) NEC – N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

2SK1398
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
100
Pulsed
VGS = 2.5 V
20
ID = 100 mA
ID = 10 mA
10
5
10
1
0.1
VGS = 4.0 V
1
10
100
ID - Drain Current - mA
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
VGS = 2.5 V
ID = 5.0 mA
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
VGS = 4.0 V
ID = 5.0 mA
20
25
15
10
0
100
50
100
150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10
Ciss
Coss
Crss
1
1
10
100
VDS - Drain to Source Voltage - V
20
15 ₀
50
100
150
Tch - Channel Temperature - ˚C
1 000
SWITCHING CHARACTERISTICS
100
10
1
1
tr
tf
td(off)
td(on)
VDD = 3.0 V
VGS = 3.0 V
RGS = 10 Ω
10
100
1000
ID - Drain Current - mA
4
Data Sheet D14772EJ2V0DS00