2SK1398 Datasheet, PDF (3/8 Pages) NEC – N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulsed
80
60
5
40
VGS = 4.5 V
VGS = 4.0 V
VGS = 2.5 V
20
0
0.5
1.0
1.5
2.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
VDS = 3.0 V
ID = 1.0 µA
1.5
1.0
0.5 ₀
50
100
150
Tch - Channel Temperature - ˚C
2SK1398
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
250
200
150
100
50
0 30 60 90 120 150 180
TA - Ambient Temperature - ˚C
FORWARD TRANSFER CHARACTERISTICS
100 ^Pulsed
10
TA = 150 ˚C
1
75 ˚C
25 ˚C
−25 ˚C
0.1
0.01
0
VDS = 3.0 V
123 4 5 67
VGS - Gate to Source Voltage - V
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VDS = 5.0 V
f = 1 kHz
100
10
1
10
100 200
ID - Drain Current - mA
Data Sheet D14772EJ2V0DS00
3