2SK1398 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
5 _DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1398
SST
FEATURES
• Directly driven by ICs having a 3-V power supply.
• Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.
• Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V)
VDSS
50
V
Gate to Source Voltage (VDS= 0 V)
VGSS
±7.0
V
Drain Current (DC)
Drain Current (pulse) ^Note
ID(DC)
±100
mA
ID(pulse)
±200
mA
Total Power Dissipation
PT
250
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
(Previous No. TC-2342)
©
Date Published March 2000 NS CP(K)
Printed in Japan
1991, 2000